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1. product profile 1.1 general description dual npn silicon rf transistor for high speed, low noise applications in a plastic, 6-pin sot363 package. the BFU520Y is part of the bfu5 family of tr ansistors, suitable for small signal to medium power applications up to 2 ghz. 1.2 features and benefits ? low noise, high breakdown rf transistor ? aec-q101 qualified ? minimum noise figure (nf min ) = 0.65 db at 900 mhz ? maximum stable gain 19 db at 900 mhz ? 11 ghz f t silicon technology 1.3 applications ? applications requiring high supply voltages and high breakdown voltages ? broadband differential amplifiers up to 2 ghz ? low noise amplifiers for ism applications ? ism band oscillators 1.4 quick reference data BFU520Y dual npn wideband s ilicon rf transistor rev. 1 ? 20 february 2014 product data sheet table 1. quick reference data t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - 5 30 ma p tot total power dissipation t sp ? 87 ?c [1] -- 450mw h fe dc current gain i c =5ma; v ce =8v 60 95 200 c c collector capacitance v cb =8v; f=1mhz - 0.48 - pf f t transition frequency i c =10ma; v ce = 8 v; f = 900 mhz - 10 - ghz
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 2 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor [1] t sp is the temperature at the solder point of the collector lead. [2] if k > 1 then g p(max) is the maximum power gain. if k ? 1 then g p(max) =msg. 2. pinning information 3. ordering information 4. marking g p(max) maximum power gain i c =5ma; v ce = 8 v; f = 900 mhz [2] -19- db nf min minimum noise figure i c =1ma; v ce = 8 v; f = 900 mhz; ? s = ? opt -0.65- db p l(1db) output power at 1 db gain compression i c =10ma; v ce =8v; z s =z l =50 ? ; f=900mhz -7.0- dbm table 1. quick reference data ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit table 2. discrete pinning pin description simplified outline graphic symbol 1 base1 2emitter1 3 collector2 4 base2 5emitter2 6 collector1 ddd table 3. ordering information type number package name description version BFU520Y - plastic surface-mounted package; 6 leads sot363 table 4. marking type number marking description BFU520Y wb* * = t : made in malaysia * = w : made in china
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 3 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor 5. design support 6. limiting values 7. recommended operating conditions [1] t sp is the temperature at the solder point of the collector lead. table 5. available design support download from the BFU520Y product information page on http://www.nxp.com . support item available remarks device models for agilent eesof eda ads yes based on mextram device model. spice model yes based on gummel-poon device model. s-parameters yes noise parameters yes solder pattern yes table 6. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cb collector-base voltage open emitter - 30 v v ce collector-emitter voltage open base - 16 v shorted base - 30 v v eb emitter-base voltage open collector - 3 v i c collector current -50ma t stg storage temperature ? 65 +150 ?c v esd electrostatic discharge voltage human body model (hbm) according to jedec standard 22-a114e - ? 150 v charged device model (cdm) according to jedec standard 22-c101b - ? 2kv table 7. characteristics symbol parameter conditions min typ max unit v cb collector-base voltage open emitter - - 24 v v ce collector-emitter voltage open base - - 12 v shorted base - - 24 v v eb emitter-base voltage open collector - - 2 v i c collector current - - 30 ma p i input power z s = 50 ? --10dbm t j junction temperature ? 40 - +150 ?c p tot total power dissipation t sp ? 87 ?c [1] --450mw
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 4 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor 8. thermal characteristics [1] t sp is the temperature at the solder point of the collector lead. t sp has the following relation to the ambient temperature t amb : t sp =t amb +p? r th(sp-a) with p being the power dissipation and r th(sp-a) being the thermal resistance between the solder point and ambient. r th(sp-a) is determined by the heat transfer properties in the application. the heat transfer properties are set by the appl ication board materials, the board layout and the environment e.g. housing. 9. characteristics table 8. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point [1] 140 k/w fig 1. power derating curve ddd 7 vs ?& 3 wrw wrw 3 wrw p: p: p: table 9. characteristics t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i c = 100 na; i e =0ma 24 - - v v (br)ceo collector-emitter breakdown voltage i c = 150 na; i b =0ma 12 - - v i c collector current -530ma i cbo collector-base cut-off current i e =0ma; v cb =8v - <1 - na h fe dc current gain i c =5ma; v ce = 8 v 60 95 200 c e emitter capacitance v eb = 0.5 v; f = 1 mhz - 0.64 - pf c re feedback capacitance v ce = 8 v; f = 1 mhz - 0.30 - pf c c collector capacitance v cb = 8 v; f = 1 mhz - 0.48 - pf f t transition frequency i c =10ma; v ce = 8 v; f = 900 mhz - 10 - ghz
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 5 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor g p(max) maximum power gain f = 433 mhz; v ce =8v [1] i c = 1 ma - 16.5 - db i c =5ma - 23 - db i c =10ma - 24 - db f = 900 mhz; v ce =8v [1] i c = 1 ma - 14.5 - db i c =5ma - 19 - db i c =10ma - 20 - db f = 1800 mhz; v ce =8v [1] i c = 1 ma - 11.5 - db i c = 5 ma - 14.5 - db i c =10ma - 14 - db ?s 21 ? 2 insertion power gain f = 433 mhz; v ce =8v i c = 1 ma - 10.5 - db i c =5ma - 20 - db i c =10ma - 22 - db f = 900 mhz; v ce =8v i c =1ma - 9 - db i c =5ma - 16 - db i c =10ma - 17 - db f = 1800 mhz; v ce =8v i c =1ma - 6.5 - db i c =5ma - 11 - db i c =10ma - 11.5 - db nf min minimum noise figure f = 433 mhz; v ce =8v; ? s = ? opt i c =1ma - 0.6 - db i c =5ma - 0.7 - db i c = 10 ma - 0.9 - db f = 900 mhz; v ce =8v; ? s = ? opt i c =1ma - 0.65 - db i c =5ma - 0.8 - db i c = 10 ma - 0.95 - db f = 1800 mhz; v ce =8v; ? s = ? opt i c =1ma - 0.8 - db i c =5ma - 0.85 - db i c = 10 ma - 1.0 - db table 9. characteristics ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 6 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor [1] if k > 1 then g p(max) is the maximum power gain. if k ? 1 then g p(max) =msg. g ass associated gain f = 433 mhz; v ce =8v; ? s = ? opt i c =1ma - 25 - db i c =5ma - 24 - db i c =10ma - 24 - db f = 900 mhz; v ce =8v; ? s = ? opt i c =1ma - 17 - db i c =5ma - 18 - db i c =10ma - 18 - db f = 1800 mhz; v ce =8v; ? s = ? opt i c = 1 ma - 10.5 - db i c =5ma - 12 - db i c = 10 ma - 12.5 - db p l(1db) output power at 1 db gain compression f = 433 mhz; v ce =8v; z s =z l =50 ? i c =5ma - 1 - dbm i c =10ma - 6 - dbm f = 900 mhz; v ce =8v; z s =z l =50 ? i c =5ma - 2 - dbm i c =10ma - 7 - dbm f = 1800 mhz; v ce =8v; z s =z l =50 ? i c =5ma - 4 - dbm i c = 10 ma - 8.5 - dbm ip3 o output third-order intercept point f 1 = 433 mhz; f 2 = 434 mhz; v ce =8v; z s =z l =50 ? i c =5ma - 10 - dbm i c =10ma - 16 - dbm f 1 = 900 mhz; f 2 = 901 mhz; v ce =8v; z s =z l =50 ? i c =5ma - 11 - dbm i c =10ma - 17 - dbm f 1 = 1800 mhz; f 2 =1801mhz; v ce =8v; z s =z l =50 ? i c =5ma - 14 - dbm i c =10ma - 18 - dbm table 9. characteristics ?continued t amb =25 ? c unless otherwise specified symbol parameter conditions min typ max unit
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 7 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor 9.1 graphs t amb =25 ? c. (1) i b =25 ? a (2) i b =75 ? a (3) i b = 125 ? a (4) i b = 175 ? a (5) i b = 225 ? a (6) i b = 275 ? a (7) i b = 325 ? a fig 2. collector current as a function of collector-emitter voltage; typical values t amb =25 ? c. (1) v ce =3.0v (2) v ce =8.0v v ce =8v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +125 ? c fig 3. dc current gain as function of collector current; typical values fig 4. dc current gain as function of collector current; typical values ddd 9 &( 9 , & , & p$ p$ p$ ddd , & p$ k )( )( k )( ddd , & p$ k )( )( k )(
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 8 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor t amb =25 ? c. (1) v ce =3.0v (2) v ce =8.0v t amb =25 ? c. (1) v ce =3.0v (2) v ce =8.0v fig 5. collector current as a function of base-emitter voltage; typical values fig 6. base current as a function of base-emitter voltage; typical values v ce =3v. (1) t amb = ?40 ? c (2) t amb = +25 ? c (3) t amb = +125 ? c i c = 0 ma; f = 1 mhz; t amb =25 ? c. fig 7. reverse base current as a function of emitter-base voltage; typical values fig 8. collector capacitance as a function of collector-base voltage; typical values ddd 9 %( 9 , & , & p$ p$ p$ ddd 9 %( 9 , % , % p$ p$ p$ ddd 9 (% 9 , %5 %5 , %5 $ $ $ ddd 9 &% 9 & & & & i) i) i)
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 9 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor t amb =25 ? c. (1) v ce =3.3v (2) v ce =5.0v (3) v ce =8.0v (4) v ce = 12.0 v fig 9. transition frequency as a functi on of collector current; typical values i c =5ma; v ce =8v; t amb =25 ? c. i c =10ma; v ce =8v; t amb =25 ? c. fig 10. gain as a function of frequency; typical values fi g 11. gain as a function of frequency; typical values ddd , & p$ i 7 i 7 *+] *+] *+] ddd i0+] * * g% g% g% _v _v _ _v _ 06* 06* 06* * spd[ spd[ * spd[ 06* 06* 06* ddd i0+] * * g% g% g% _v _v _ _v _ 06* 06* 06* * spd[ spd[ * spd[ 06* 06* 06*
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 10 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor v ce =8v; t amb =25 ? c. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz v ce =8v; t amb =25 ? c. if k >1 then g p(max) = maximum power gain. if k < 1 then g p(max) = msg. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz fig 12. insertion power gain as a function of collector current; typical values fig 13. maximum power gain as a function of collector current; typical values ddd , & p$ _v _v _ _v _ g% g% g% ddd , & p$ * spd[ spd[ * spd[ g% g% g%
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 11 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor i c =10ma; t amb =25 ? c. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz i c =10ma; t amb =25 ? c. if k >1 then g p(max) = maximum power gain. if k < 1 then g p(max) = msg. (1) f = 300 mhz (2) f = 433 mhz (3) f = 800 mhz (4) f = 900 mhz (5) f = 1800 mhz fig 14. insertion power gain as a function of collector-emitter voltage; typical values fig 15. maximum power gain as a function of collector-emitter voltage; typical values ddd 9 &( 9 _v _v _ _v _ g% g% g% ddd 9 &( 9 * spd[ spd[ * spd[ g% g% g%
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 12 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor v ce = 8 v; 40 mhz ? f ? 3 ghz. (1) i c =5 ma (2) i c = 10 ma fig 16. input reflection coefficient (s 11 ); typical values v ce = 8 v; 40 mhz ? f ? 3 ghz. (1) i c =5 ma (2) i c = 10 ma fig 17. output reflection coefficient (s 22 ); typical values ? ddd ? ddd
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 13 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor v ce =8v; t amb =25 ? c. (1) f 1 = 433 mhz; f 2 = 434 mhz (2) f 1 = 900 mhz; f 2 = 901 mhz (3) f 1 = 1800 mhz; f 2 = 1801 mhz v ce =8v; t amb =25 ? c. (1) f = 433 mhz (2) f = 900 mhz (3) f = 1800 mhz fig 18. output third-order intercept point as a function of collector current; typical values fig 19. output power at 1 db gain compression as a function of collector current; typical values i c = 10 ma; t amb =25 ? c. (1) f 1 = 433 mhz; f 2 = 434 mhz (2) f 1 = 900 mhz; f 2 = 901 mhz (3) f 1 = 1800 mhz; f 2 = 1801 mhz i c =10 ma; t amb =25 ? c. (1) f = 433 mhz (2) f = 900 mhz (3) f = 1800 mhz fig 20. output third-order intercept point as a function of collector-emitter voltage; typical values fig 21. output power at 1 db gain compression as a function of collector-emitter voltage; typical values ddd , & p$ ,3 ,3 r ,3 r g%p g%p g%p ddd , & p$ 3 /g% /g% 3 /g% g%p g%p g%p ddd 9 &( 9 ,3 ,3 r ,3 r g%p g%p g%p ddd 9 &( 9 3 /g% /g% 3 /g% g%p g%p g%p
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 14 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor v ce =8v; t amb =25 ? c; ? s = ? opt . (1) f = 433 mhz (2) f = 900 mhz (3) f = 1800 mhz v ce =8v; t amb =25 ? c; ? s = ? opt . (1) i c =1ma (2) i c =2ma (3) i c =3ma (4) i c =5ma (5) i c =8ma (6) i c =10ma (7) i c =15ma (8) i c =20ma fig 22. minimum noise figure as a function of collector current; typical values fig 23. minimum noise figu re as a function of frequency; typical values ddd , & p$ 1) 1) plq plq 1) plq g% g% g% ddd i0+] 1) 1) plq plq 1) plq g% g% g%
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 15 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor v ce = 8 v; 400 mhz ? f ? 2 ghz. (1) i c =1ma (2) i c =2ma (3) i c =3ma (4) i c =5ma (5) i c =8ma (6) i c =10ma (7) i c =15ma (8) i c =20ma fig 24. optimum reflec tion coefficient ( ? opt ); typical values ? ddd
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 16 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor 10. package outline fig 25. package outline sot363 5()(5(1&(6 287/,1( 9(56,21 (8523($1 352-(&7,21 ,668('$7( ,(& -('(& -(,7$ 627 6& z% 0 e s ' h h slq lqgh[ $ $ / s 4 ghwdlo; + ( ( y 0 $ $ % \ p p vfdoh f ; 3odvwlfvxuidfhprxqwhgs dfndjhohdgv 627 81,7 $ pd[ e s f' ( h + ( / s 4\ zy pp h ',0(16,216ppduhwkhruljlqdoglphqvlrqv $
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 17 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor 11. handling information 12. abbreviations 13. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description aec automotive electronics council ism industrial, scientific and medical lna low-noise amplifier msg maximum stable gain npn negative-positive-negative sma subminiature version a table 11. revision history document id release date data sheet status change notice supersedes BFU520Y v.1 20140220 product data sheet - -
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 18 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 14.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 14.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BFU520Y all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2014. all rights reserved. product data sheet rev. 1 ? 20 february 2014 19 of 20 nxp semiconductors BFU520Y dual npn wideband silicon rf transistor suitability for use in automotive applications ? this nxp semiconductors product has been qua lified for use in automotive applications. unless otherwise agreed in wr iting, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 14.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BFU520Y dual npn wideband silicon rf transistor ? nxp b.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 february 2014 document identifier: BFU520Y please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 16. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 design support . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 recommended operating conditions. . . . . . . . 3 8 thermal characteristics . . . . . . . . . . . . . . . . . . 4 9 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 9.1 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 11 handling information. . . . . . . . . . . . . . . . . . . . 17 12 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 14.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 14.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 15 contact information. . . . . . . . . . . . . . . . . . . . . 19 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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